跳到主要內容區
  1. 首頁
  2. 系所成員
  3. 師資陣容

譚仕煒老師著作

 

期刊論文

  1. S. W. Tan, S. W. Huang Y. Z. Hsieh, S. S. Lin, " The Estimation Life Cycle of Lithium Ion Battery based on Deep Learning Network and Genetic Algorithm, " Energies 2021, 14, 4423. SCI, Rank Factor: xxx/xxx, Impact Factor: 3.004.
  2. Y. Z. Hsieh, S. S. Lin, E. Y. Chang, K. K. Tiong, S. W. Tan, C. Y. Hor, S. C. Cheng, Y. S. Tsai and C. R. Chen, "Wind Technologies for Wake Effect Performance in Windfarm Layout Based on Population-Based Optimization Algorithm," Energies 2021, 14, 4125. SCI, Rank Factor: xxx/xxx, Impact Factor: 3.004.
  3. S. S. Lin*, Y. C. Luo, Y. L. Jeng, S. W. Tan*, C. R. Chen and P. Y. Chiang, " ARCS-Assisted Teaching Robots Based on Anticipatory Computing and Emotional Big Data for Improving Sustainable Learning Efficiency and Motivation," Sustainability, vol. 12, Article ID 5605, 2020. SCI, Rank Factor: xxx/xxx, Impact Factor: x.xxx.
  4. Y. Z. Hsieh, S. W. Tan, S. L. Gu, Y. L. Jeng, "Prediction of Battery Discharge States Based on the Recurrent Neural Network, " Journal of Internet Technology, vol. 21, no. 1, pp. 113-120, Jan. 2020. SCI, Rank Factor: xxx/xxx, Impact Factor: x.xxx.
  5. S. W. Tan and S. W. Lai, “A Current Transport Mechanism of Metal-Semiconductor-Metal GaAs Diodes with Mixed Contacts of Pd and SiO2”, Advances in Materials Science and Engineering, vol. 2013, Article ID 531573, 2013. SCI, Rank Factor: 196/232, Impact Factor: 0.415.
  6. C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai and W. S. Lour, “Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture”, International Journal of Hydrogen Energy, vol. 38, pp. 313–318, 2013. SCI, Rank Factor: 30/127, Impact Factor: 4.057
  7. S. W. Tan and S. W. Lai, “Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode”, PLoS ONE, vol. 7, Article ID e50681, 2012. SCI, Rank Factor: 12/85, Impact Factor: 4.092.
  8. S. W. Tan and S. W. Lai, “Experimental characterization and modeling analysis on npn AlGaN/GaN HBT with high ideality factor in both collector and base current”, Surface Review and Letters, vol. 19, Article ID 1250043, 2012. SCI, Rank Factor: 60/69, Impact Factor: 0.493.
  9. S. W. Tan and S. W. Lai, “Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment”, Advances in Materials Science and Engineering, vol. 2012, Article ID 654762, 2012. SCI, Rank Factor: 196/232, Impact Factor: 0.415.
  10. C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai, K. Y. Hsu and W. S. Lour, “Unidirectional sensing characteristics of structured Au–GaN–Pt diodes for differential-pair hydrogen sensors”, International Journal of Hydrogen Energy, vol. 37, pp. 18579–18587, 2012. SCI, Rank Factor: 30/127, Impact Factor: 4.057.
  11. S. W. Tan, J. H. Tsai, S. W. Lai, C. Lo and W. S. Lour, “Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer”, International Journal of Hydrogen Energy, vol. 36, pp. 15446-15454, 2011. SCI, Rank Factor: 30/127, Impact Factor: 4.057.
  12. S. W. Tan and C. W. Liao, “Self-aligned enhancement-mode and parasite depletion-mode heterojunction doped-channel FET for low power supply DCFL Application”, Journal of The Electrochemical Society, vol. 154, pp. H948-H950, 2007. SCI, Rank Factor: 1/18, Impact Factor: 2.427.
  13. S. W. Tan, “The influence of ambient temperature on the forward bias electrical characteristics of p-n heterojunction and homojunction interface”, Journal of The Electrochemical Society, vol. 154, pp. H365-H369, 2007. SCI, Rank Factor: 1/18, Impact Factor: 2.427.
  14. S. W. Tan, W. T. Chen, H. R. Chen, M. K. Hsu, S. Y. Chiu and W. S. Lour “Influence of base passivation on optical performance of dual-emitter heterojunction phototransistors”, ECS Trans., vol. 6, pp. 267-275, 2007.
  15. S. W. Tan, C. W. Liao, K. P. Liu, H. H. Chen, Y. S. Huang and W. C. Chen “The mechanism of phototransistors and its model in OEIC application”, ECS Trans., vol. 2, pp. 79-89, 2006.
  16. S. W. Tan, H. R. Chen, W. T. Chen, M. K. Hsu, A. H. Lin and W. S. Lour, “Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation”, IEEE Trans. Electron Devices, vol. 52, pp. 204-210, 2005. SCI, Rank Factor: 34/247, Impact Factor: 2.267.
  17. S. W. Tan, H. R. Chen, W. T. Chen, M. K. Hsu, A. H. Lin and W. S. Lour, “The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors”, J. Appl. Phys., vol. 97, pp. 034502, 2005. SCI, Rank Factor: 34/118, Impact Factor: 2.079.
  18. S. W. Tan, H. R. Chen, M. Y. Chu, W. T. Chen, A. H. Lin, M. K. Hsu, T. S. Lin, W. S. Lour, “Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface” Superlattices and Microstructures, vol. 37, pp. 401-409, 2005. SCI, Rank Factor: 43/68, Impact Factor: 1.096.
  19. H. R. Chen, W. T. Chen, M. K. Hsu, S. W. Tan, W. S. Lour, “Fringing effects of V-shape gate metal on GaAs/InGaP/InGaAs doped-channel field-effect transistors,” Semicond. Sci. & Technol., vol. 20, pp. 932-937, 2005. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  20. H. R. Chen, W. T. Chen, M. K. Hsu, S. W. Tan, W. S. Lour, “Comparisons and modeling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes,” Semicond. Sci. & Technol., vol. 20, pp. 548-554, 2005. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  21. H. R. Chen, W. T. Chen, M. K. Hsu, S. W. Tan, W. S. Lour, “Three-terminal dual-emitter phototransistor with both voltage- and power-tunable optical gain,” Jpn. J. Appl. Phys. Pt.I, vol. 44, pp. 7476-7481, 2005. SCI, Rank Factor: 76/118, Impact Factor: 1.024.
  22. S. W. Tan, H. R. Chen, A. H. Lin, W. T. Chen and W. S. Lour, “Performance enhancement of double-emitter HPTs with different emitter-area ratios”, Electronics Lett., vol. 40, pp. 628-629, 2004. SCI, Rank Factor: 124/247, Impact Factor: 1.004.
  23. S. W. Tan, H. R. Chen, A. H. Lin, W. T. Chen and W. S. Lour, “Experiments and modeling of double-emitter HPTs with different emitter-area ratios for functional applications”, Semicond. Sci. & Technol., vol. 19, pp. 1213-1219, 2004. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  24. S. W. Tan, M. K. Hsu, A. H. Lin, M. Y. Chu, W. T. Chen and W. S. Lour, “Sub-0.25 micro gate like heterojunction doped-channel FETs with a controllable notch-angle V-gate”, Semicond. Sci. & Technol., vol. 19, pp. 384-388, 2004. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  25. S. W. Tan, W. T. Chen. M. Y. Chu and W. S. Lour, “Sub-0.5-um gate doped-channel FETs with HEMT-like channel using thermally re-flowed photo-resist and spin-on-glass”, Semicond. Sci. & Technol., vol. 19, pp. 167-171, 2004. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  26. S. W. Tan, W. T. Chen, M. Y. Chu, W. S. Lour, “Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors” Superlattices and Microstructures, vol. 33, pp. 209-216, 2003. SCI, Rank Factor:43/68, Impact Factor: 1.096.
  27. S. W. Tan, W. T. Chen, M. Y. Chu, M. K. Tsai, Y. J. Yang and W. S. Lour, “An Investigation of direct-current characteristics of composite-emitter heterojunction bipolar transistors” Jpn. J. Appl. Phys. Pt.I, vol. 42, pp. 4960-4965, 2003. SCI, Rank Factor: 76/118, Impact Factor: 1.024.
  28. M. K. Tsai, S. W. Tan, Y. W. Wu, Y. J. Yang and W. S. Lour, “Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital-graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation” IEEE Trans. Electron Devices, vol. 50, pp. 303-309, 2003. SCI, Rank Factor: 34/247, Impact Factor: 2.267.
  29. M. K. Tsai, S. W. Tan, Y. W. Wu, W. S. Lour, and Y. J. Yang, “Depletion- and enhancement-mode InGaP/GaAs δ-HEMT’s for Low supply-voltage applications,” Semicond. Sci. & Technol., vol. 17, pp. 156-160, 2002. SCI, Rank Factor: 94/247, Impact Factor: 1.333.
  30. W. S. Lour, Y. W. Wu, S. W. Tan M. K. Tsai and Y. J. Yang, “Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage” Appl. Phys. Lett., vol. 80, pp. 3436-3438, 2002. SCI, Rank Factor: 15/118, Impact Factor: 3.841.
  31. W. S. Lour, M. K. Tsai, K. C. Chen, S. W. Tan, Y. W. Wu and Y. J. Yang, “Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors”, Physica E, vol. 13, pp. 934-937, 2002. SCI, Rank Factor: 38/68, Impact Factor: 1.304.
  32. W. S. Lour, M. K. Tsai, K. C. Chen, Y. W. Wu, S. W. Tan and Y. J. Yang, “Dual-Gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing,” Semicond. Sci. & Technol., vol. 16, pp. 826-830, 2001. SCI, Rank Factor: 94/247, Impact Factor: 1.333.

會議論文

  1. Jwo-Shiun Sun, Guan-Pu Pan, Han-Sheng Fang, Pei-Hua Jiang, Tan-Hsu Tan and S. W. Tan “A Contactless Charging Platform with Reconfigurable Coils”, 2017 IEEE International Conference on Systems, Man, and Cybernetics, Banff, 2017.
  2. S. W. Tan, S. W. Lai, W. S. Lour and J. H. Tsai “Depletion- and Enhancement-Mode Self-Aligned InGaP/GaAs Heterojunction Doped-Channel FET”, ECS, Montreal, 2011.
  3. J. H. Tsai, W. C. Yang, W. S. Lour and S. W. Tan “Metal-Semiconductor-Metal (MSM) Type of GaN-based Hydrogen Sensors with Pd-SiO2 Mixture Electrodes”, ECS, Montreal, 2011.
  4. S. W. Tan, C. W. Liao, S. W. Lai, C. W. Liao and C. S. Lin “The Sidewall Effects of Three-Terminal Phototransistors”, ECS, San Francisco, 2009.
  5. S. Y. Hu, Y. C. Lee, W. Water, J. C. Huang, J. W. Lee, J. L. Shen and S. W. Tan “Effects of RTA-trteated ZnO/Quartz thin films on the structural and optical properties”, ECS, Chicago, 2007.
  6. S. W. Tan, K. P. Liu, C. W. Liao, Y. S. Huang, W. C. Chen and H. H. Chen “The characteristics of functional phototransistor”, IWJT, Shanghai, 2006.
  7. S. W. Tan, H. R. Chen, M. Y. Chu, M. K. Hsu and W. S. Lour “Fringing effects of v-gate on heterojunction doped-channel field-effect transistors” COMMAD, Brisbane, 2004.
  8. H. R. Chen, S. W. Tan, W. T. Chen, T. S. Lin and W. S. Lour “The effect on base bias for InGaP/GaAs heterojunction phototransistors” COMMAD, Brisbane, 2004.
  9. W. T. Chen, H. R. Chen, A. H. Lin, S. W. Tan and W. S. Lour “Functional double-emitter HPTs with different emitter-area ratios” COMMAD, Brisbane, 2004.
  10. S. W. Tan, H. R. Chen, M. Y. Chu, M. K. Hsu, T. S. Lin and W. S. Lour” Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD”, IVESC, Beijing, 2004.
  11. H. R. Chen, S. W. Tan, A. H. Lin, W. T. Chen, and W. S. Lour “Surface effects on voltage- and current-source bias phototransistors grown by low-pressure MOCVD”, IVESC, Beijing, 2004.
  12. S. W. Tan, M. K. Hsu, M. Y. Chu, A. H. Lin, T. S. Lin and W. S. Lour “Improvement the DC and RF characteristics of pseudomorphic heterojunction dual V-groove gate doped-channel FET,” ECS, San Antonio, 2004.
  13. S. W. Tan, H. R. Chen, W. T. Chen, and W. S. Lour “Characteristics and modeling of heterojunction phototransistor with DC base bias”, ECS, San Antonio, 2004.
  14. S. W. Tan, W. T. Chen, M. Y. Chu and W. S. Lour, “A economic method for fabrication sub-quarter-mm gate doped-channel FET’s by photolithography”, IWJT, Shanghai, 2004.
  15. S. W. Tan, W. T. Chen, M. Y. Chu and W. S. Lour, “A new model for the phototransistor”, IWJT, Shanghai, 2004.
  16. S. W. Tan, H. R. Chen, W. T. Chen, M. Y. Chu and W. S. Lour, “Sulfur- and InGaP-passivated heterojunction bipolar transistors”, IWJT, Shanghai, 2004.
  17. S. W. Tan, W. T. Chen, M. Y. Chu, M. K. Hsu, A. H. Lin, T. S. Lin and W. S. Lour “The optical and DC characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction phototransistors,” IEEE International MWSCAS, Cairo, 2003.
  18. S. W. Tan, M. K. Hsu, A. H. Lin, W. T. Chen, M. Y. Chu, T. S. Lin and W. S. Lour “The controllable notch-angle V-gate heterojunction doped-channel FETs,” IEEE International MWSCAS, Cairo, 2003.
  19. S. W. Tan, W. T. Chen, M. Y. Chu and W. S. Lour “Characteristics of sulfur- and InGaP-passivated InGaP/GaAs heterojunction bipolar transistors,” ECS, Paris, 2003.
  20. S. W. Tan, W. T. Chen, M. Y. Chu and W. S. Lour, ” Low voltage operation phototransistor with InGaP/AlGaAs/GaAs composite emitter, ECS, Paris, 2003.
  21. S. W. Tan, W. T. Chen, M. Y. Chu, W. S. Lour, “Sub-quarter-micrometer-like V-gate pseudomorphic doped-channel FET’s,” COMMAD, Sydney, 2002.
  22. M. K. Tsai, Y. W. Wu, S. W. Tan, M. Y. Chu, W. T. Chen, Y. J. Yang, and W. S. Lour, “A new InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors,” COMMAD, Sydney, 2002.
  23. M. K. Tsai, Y. W. Wu, S. W. Tan, Y. J. Yang, and W. S. Lour, “New composite-emitter HBT’s with reduced turn-on voltage and small offset voltage,” ISCS, Lausanne, 2002.
  24. M. K. Tsai, Y. W. Wu, S. W. Tan, W. S. Lour, and Y. J. Yang “Sub-micron gate by optical lithography using photoresist re-flow and spin-on-glass,” ECS, San Francisco, 2001.
  25. W. S. Lour, M. K. Tsai, K. C. Chen, Y. W. Wu, S. W. Tan and Y. J. Yang, “In0.5Ga0.5P/In0.2Ga0.8As dual gate pseudomorphic high electron mobility transistors”, ECS, San Francisco, 2001.
  26. W.S. Lour, M.K. Tsai, K.J. Chen, S. W. Tan, Y.W. Wu and Y.J. Yang, “Investigation of self-aligned P++-GaAs/n-InGaP hetero-junction field-effect transistors”, Modulated Semiconductor Structure 10, Linz, Austria, July 23-27, 2001.
  27. W. S. Lour, M. K. Tsai, K. C. Chen, Y. W. Wu, S. W. Tan and Y. J. Yang, “High-linearity and variable gate-voltage swing dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors,” COMMAD, Melbourne, 2000.

 

瀏覽數:
加到我的最愛
友善列印
登入成功